Researchers have announced the demonstration of high-speed spin-orbit-torque magnetoresistive random access memory cell compatible with 300 mm Si CMOS technology. Researchers at Tohoku University have ...

In recent years, gallium nitride (GaN) has emerged as a compelling candidate to complement the silicon material used in wireless communication and power conversion applications. Benefits of GaN ...

A technical paper titled “Analysis of Logic-in-Memory Full Adder Circuit With Floating Gate Field Effect Transistor (FGFET)” was published by researchers at Konkuk University, Korea National ...

The first CMOS chip was created by Fairchild Semiconductor, presented at ISSCC in 1963. The logic topologies used in today’s textbooks originated in this work. P-type devices are slower than N-type by ...

TEMPE, Ariz. – May 13, 2009 – Arizona State University’s Flexible Display Center (FDC) and the University of Texas at Dallas (UT Dallas) today announced that they have successfully produced CMOS ...

Skyrocketing AI compute workloads and fixed power budgets are forcing chip and system architects to take a much harder look at compute in memory (CIM), which until recently was considered little more ...

CMOS stands for Complementary Metal Oxide Semiconductor and despite its size, it does much more than you think. Let’s clarify a few things first. A CMOS chip is vastly different than the CMOS battery ...

Researchers at Tohoku University have announced the demonstration of high-speed spin-orbit-torque (SOT) magnetoresistive random access memory cell compatible with 300 mm Si CMOS technology. The demand ...