Purdue University researchers are making progress in developing a new type of transistor that uses a finlike structure instead of the conventional flat design, possibly enabling engineers to create ...
It costs nearly three times more to design a finFET-based chip than a 28nm planar chip, and it takes more than twice as long to get working silicon. The foundry business is heating up as some new and ...
Survey shows nearly a third of all designs are targeting the most advanced process nodes; 10nm tapeouts will happen right on the heels of 14/16nm. My previous blog, Power Reduction Techniques, covered ...
NXP Semiconductors and TSMC have jointly announced their collaboration to deliver the industry's first automotive embedded MRAM in 16 nm FinFET technology. As automakers transition to software-defined ...
Imec reports improved performance for both Ge-based n-type FinFETs and Ge-based p-type gate-all-around (GAA) devices. For Ge n-type FinFETs, pre-gate stack process optimization dramatically improved ...
(Nanowerk News) Bulk FinFETs are key devices for advanced technology node applications such as analog circuits and SRAMs because of a very good short channel effect control and transistor compactness.
FinFET technology is seen as the answer to fabrication processes below 20 nm. However, FinFET also presents a lot of uncertainty and concern related to defect manifestation, necessary test methods, ...
Imec has shown a tungsten (W) buried power rail (BPR) integration scheme in a FinFET CMOS test vehicle, which does not adversely impact the CMOS device characteristics. When interfacing the BPR with ...
Samsung has been hit with a $400M fine for failing to license a critical FinFET patent -- and that damage could balloon up to $1.2B at the judge's discretion. Share on Facebook (opens in a new window) ...
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