Samsung Electronics has announced that its development of the 3 nm gate-all-around (GAA) process called 3GAE is on track and that it has made available version 0.1 of its process design kit (PDK) in ...
Samsung, playing a distant second to TSMC for quite some time, has vowed to launch the 1.4-nm chip manufacturing node by 2027, leapfrogging both TSMC and Intel Foundry Services (IFS) by a wide margin.
Samsung has announced that it has kicked off the initial production of its next-gen 3nm process node, using Gate-All-Around (GAA) transistor architecture. This is the first time Samsung's new ...
SANTA CLARA, Calif., Sept. 24, 2024 (GLOBE NEWSWIRE) -- Silvaco Group, Inc. (SVCO) (Nasdaq: SVCO, “Silvaco” or the “Company”), a provider of TCAD, EDA software, and SIP solutions that enable ...
Samsung Electronics and SK Hynix have revealed the latest development trends for advanced logic chips technology and memory products at recent technology symposiums, with the former stating that it ...
We're about to enter a very unique era in the world of silicon fabrication. The currently-used FinFET transistors have been in use since 2011, but as nodes continue to shrink they will need to be ...
TSMC's has disclosed that its 3nm process will continue to adopt a FinFET structure, but the foundry reportedly will take a new approach to its 2nm chip development, replacing FinFET with GAA ...
Needham analysts shared the key takeaways from Taiwan Semiconductor Manufacturing Company Ltd's (NYSE:TSM) 2022 Technology Symposium. Firstly, N3 FinFLEX extends design optionality to transistor-level ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback