Purdue University researchers are making progress in developing a new type of transistor that uses a finlike structure instead of the conventional flat design, possibly enabling engineers to create ...

When making the transition from planar devices to FinFETs, IP design challenges arise that require education and experience when dealing with the complexities. Since the inception of the ...

Researchers at Purdue University have reported important progress in developing finFETs, a type of transistor that some say will eventually substitute the silicon-based kind because it allows ...

Massive amounts of money and effort are being spent to determine how long finFETs will last and what should replace them. In the near term, the leading-edge chip roadmap looks fairly clear. Chips ...

At the recent 2018 IEEE International Electron Devices Meeting (IEDM), TSMC and National Tsing Hua University presented a paper on an ion detector or pH sensor based on a 16nm finFET technology.

At the December 2021 IEDM conference (a conference for people who design advanced semiconductors), IBM announced it was turning transistors on their heads to keep Moore’s Law scaling alive. The new ...

How does a nanosheet transistor compare with a FinFET? Issues involved in developing and manufacturing nanosheet transistors. Benefits of adopting nanosheet transistors in chip design. It’s the end of ...

With every process node advance, new types of manufacturing defects manifest. These defects are especially prevalent during the early phase. For early adopters, silicon manufacturing tests must evolve ...