In the IXBH40N160, IXYS has developed an extremely fast, homogeneous base IGBT by the introduction of collector shorts. Since this modification made the device behave like a very low RDS(on) MOSFET, ...

IGBT, stands for Insulated Gate Bipolar Transistor. It is a bipolar transistor with an insulated gate terminal. It combines a control input with a MOS structure and a bipolar power transistor in a ...

China-based power semiconductor provider Byinka has announced the shipment of its 7th-generation Insulated Gate Bipolar Transistor (IGBT) to leading companies across industries such as electric ...

For the PDF version of this article, including diagrams and/or equations, click here. The latest trench IGBTs optimized for appliance-motor controls display lower V CE ON and lower switching loss than ...

Development engineers working on the design of cost-efficient power electronic converters used in electrical drives, UPSs, welding machines or inductive heating systems depend on reliable and robust ...