EDN

Evaluating IGBT Losses using Numerical Method

This application note presents a numerical algorithm for IGBTs that operate in switch mode power circuits in order to determine its losses. The design example uses a 600 W zero-current switching boost ...
Electronic Design

High Speed IGBTs Take on the Super Junction MOSFET

The ultra-fast IGBT compares favorably with the super junction MOSFET in terms of matched or superior performance, an optimized diode at an elevated temperature, and a competitive price tag. In the ...
Electronic Design

SiC “Super” Junction Transistors Deliver High Temp Performance

GeneSiC’s SiC-based 1200 V/220 mΩ Super Junction Transistors (SJTs) feature high temperature (> 300 °C) operation capability, ultra-fast switching transitions ( 15 ns), extremely low losses, and a ...
Nature

Power Electronics Reliability and Thermal Management

Power electronics underpin modern energy systems and transportation, making the reliability and thermal management of semiconductor modules a matter of global significance. The field is marked by ...
EDN

Hybrid IGBTs cut loss and power

Rohm’s RGWxx65C automotive IGBTs employ an integrated 650-V SiC Schottky barrier diode in the IGBT feedback block. This fast-recovery freewheeling diode has almost no recovery energy, thus minimal ...
Business Wire

Toshiba’s New Discrete IGBT for Voltage Resonance Circuits Contributes to Lower Power Consumption and Easier Design of Equipment

TOKYO--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched the “GT20N135SRA,” a 1350V discrete IGBT for use in voltage resonance circuits in tabletop IH cookers, ...