Freescale Semiconductor has introduced a 50 volt laterally diffused MOS (LDMOS) RF power transistor designed to deliver 50 percent higher output power than competing UHF TV broadcast solutions.
Austin, June 16, 2025 (GLOBE NEWSWIRE) -- LDMOS RF Power Transistor Market Size & Growth Insights: According to the SNS Insider,“The LDMOS RF Power Transistor Market size was valued at USD 1.31 ...
Microsemi Corporation ( MSCC) recently unveiled a 750 watt (W) RF transistor named MDSGN-750ELMV. The transistor is designed to provide highest power performance in air traffic control and accident ...
Ampleon, the Netherlands-based power semiconductor firm, has introduced an RF power transistor designed for DVB-T UHF asymmetrical wideband Doherty amplifier applications. The company claims the RF ...
NXP Semiconductors and Freescale have made additions to their rf power transistor portfolios in advance of the forthcoming International Microwave Symposium. NXP has expanded its eighth generation ...
PHOENIX--(BUSINESS WIRE)--Freescale Semiconductor (NYSE: FSL) today introduced its first gallium nitride (GaN) RF power transistor for cellular base stations. The new A2G22S160-01S delivers ...
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Researchers achieve record-breaking RF GaN-on-Si transistor performance for high-efficiency 6G power amplifiers
Imec researchers have set a new benchmark in RF transistor performance for mobile applications. They present a gallium nitride (GaN) MOSHEMT (metal-oxide-semiconductor high-electron-mobility ...
Abstract— Today’s on-chip Analog/Mixed-Signal and RF (A/RF) systems have reached a limit of size and complexity where transistor-level SPICE and FastSPICE simulation approaches cannot deliver a ...
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