This application note presents a numerical algorithm for IGBTs that operate in switch mode power circuits in order to determine its losses. The design example uses a 600 W zero-current switching boost ...
In the last decade, the automotive electronics industry has been turned upside down. Twenty years ago, the power MOSFET was the predominant component in terms of both socket count and dollar value ...
GeneSiC’s SiC-based 1200 V/220 mΩ Super Junction Transistors (SJTs) feature high temperature (> 300 °C) operation capability, ultra-fast switching transitions ( 15 ns), extremely low losses, and a ...
Power electronics underpin modern energy systems and transportation, making the reliability and thermal management of semiconductor modules a matter of global significance. The field is marked by ...
Rohm’s RGWxx65C automotive IGBTs employ an integrated 650-V SiC Schottky barrier diode in the IGBT feedback block. This fast-recovery freewheeling diode has almost no recovery energy, thus minimal ...
TOKYO--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched the “GT20N135SRA,” a 1350V discrete IGBT for use in voltage resonance circuits in tabletop IH cookers, ...
DUBLIN--(BUSINESS WIRE)--The "IGBT and Super Junction MOSFET - Global Strategic Business Report" report has been added to ResearchAndMarkets.com's offering. The global market for IGBT and Super ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback