Overview Paralleling IGBTs become necessary for power conversion equipment with higher output power ratings, where a single IGBT cannot provide the required load current. This TI …

The same MOSFET with an identical driver circuit used for synchronous rectification can be turned on or off quicker than if it would be driven in its first quadrant operation.

Choose from our comprehensive portfolio of isolated, half-bridge and low-side gate drivers, which support IGBTs, GaNFETs and SiCFETs, to optimize your design. Our gate driver solutions, …

Gate drivers are available in basic, functional and reinforced isolation and accept low-power input from a controller IC to produce the appropriate high-current gate drive for a MOSFET, IGBT, …

This evaluation module, featuring ISO5852S reinforced isolated gate driver device, allows designers to evaluate device AC and DC performance with a pre-populated 1-nF load or with a …

This reference design details a gate driver circuit for a three-phase inverter. The gate drive circuit comprises of three UCC21520 devices, which are dual IGBT gate drivers. The UCC21520 has …

The UCC5880-Q1 device is an isolated, highly configurable adjustable drive strength gate driver targeted to drive high power SiC MOSFETs and IGBTs in EV/HEV applications.

There are certain challenges towards doing this, all of which can be easily addressed by employing a gate driver. We’ll talk about how gate driver devices can be used to control relays …

Modern IGBTs have the switching speed suitable for power supply applications, thus IGBTs will compete with MOSFETs for certain high voltage applications as well. Many designers have …

This reference uses six UCC5880-Q1 gate-drive integrated circuits (ICs) and six LM5180-Q1 isolated bias supplies to interface with and drive Infineon® HybridPACKTM insulated-gate …