Consider an n-channel MOSFET with n^ polysilicon gate (neglect poly depletion effect). The gate oxide is 7  nm thick, and the p-type body (or substrate) has a retrograde doping, as shown in Figure 6.25 , with Ns=0. Take 2 =1  V. (a) Choose the values of xs and Na such that the maximum depletion width is Wd m= 0.1 μm and the threshold voltage (at 2 ) is Vt=0.3  V. (b) Following (a), what is the body effect coefficient, m, and the inverse slope of log subthreshold current versus gate voltage (long
Consider an n-channel MOSFET with n^ polysilicon gate (neglect p…
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